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AMMC-5620
6 - 20 GHz High Gain Amplifier
Data Sheet
Chip Size: 1410 x 1010 m (55.5 x 39.7 mils) Chip Size Tolerance: 10 m ( 0.4 mils) Chip Thickness: 100 10 m (4 0.4 mils) Pad Dimensions: 80 x 80 m (3.1 x 3.1 mils or larger)
Description
Avago Technologies' AMMC-5620 MMIC is a GaAs wideband amplifier designed for medium output power and high gain over the 6 - 20 GHz frequency range. The 3 cascaded stages provide high gain while the single bias supply offers ease of use. It is fabricated using a PHEMT integrated circuit process. The RF input and output ports have matching circuitry for use in 50- environments. The backside of the chip is both RF and DC ground. This helps simplify the assembly process and reduces assembly related performance variations and costs. For improved reliability and moisture protection, the die is passivated at the active areas. The MMIC is a cost effective alternative to hybrid (discrete FET) amplifiers that require complex tuning and assembly processes. AMMC-5620 Absolute Maximum Ratings[1] Symbol VDD IDD PDC Pin Tch Tb Tstg Tmax Parameters/Conditions Drain Supply Voltage Total Drain Current DC Power Dissipation RF CW Input Power Channel Temp. Operating Backside Temp. Storage Temp. Maximum Assembly Temp. (60 sec max)
Features
* Frequency Range: 6 - 20 GHz * High Gain: 19 dB Typical * Output Power: 15dBm Typical * Input and Output Return Loss: < -10 dB * Positive Gain Slope: + 0.21dB/GHz Typical * Single Supply Bias: 5 V @ 95 mA Typical
Applications
* General purpose, wide-band amplifier in communication systems or microwave instrumentation * High gain amplifier
Units V mA W dBm C C C C
Min.
Max. 7.5 135 1.0 20 +150
- 55 - 65 +165 +300
Note: 1. Operation in excess of any one of these conditions may result in permanent damage to this device.
Note: These devices are ESD sensitive. The following precautions are strongly recommended. Ensure that an ESD approved carrier is used when dice are transported from one destination to another. Personal grounding is to be worn at all times when handling these devices
AMMC-5620 DC Specifications/Physical Properties [1] Symbol VDD IDD IDD qch-b Parameters and Test Conditions Recommended Drain Supply Current Total Drain Supply Current ( VDD = 5V) Total Drain Supply Current ( VDD = 7V) Thermal Resistance [3] (Backside temperature (Tb) = 25 C Units V mA mA C/W 70 Min. Typical 5 95 105 33 130 Max.
Notes: 1. Backside temperature Tb = 25C unless otherwise noted 2. Channel-to-backside Thermal Resistance (qch-b) = 47C/W at Tchannel (Tc) = 150C as measured using infrared microscopy. Thermal Resistance at backside temperature (Tb) = 25C calculated from measured data.
AMMC-5620 RF Specifications [3] Tb = 25C, VDD=5V, IDD=95 mA, Zo=50 Symbol S21 2
Gain Slope
Parameters and Test Conditions Small-signal Gain Positive Small-signal Gain Slope Input Return Loss Output Return Loss Reverse Isolation Output Power at 1 dB Gain Compression @ 20 GHz Saturated Output Power (3dB Gain Compression) @ 20 GHz Output 3rd Order Intercept Point @ 20 GHz Noise Figure @ 20 GHz
Units dB dB/GHz dB dB dB dBm dBm dBm dB
Min. 16
Typical 19 +0.21
Max. 22
RLin RLout S12 2 P-1dB Psat OIP3 NF
10 10
13 14 - 55
12.5 14.5
15 17 23.5 4.2 5.0
Notes: 3. 100% on-wafer RF test is done at frequency = 6, 13 and 20 GHz, except as noted.
2
AMMC-5620 Typical Performances (Tchuck=25C, VDD=5V, IDD = 95 mA,
25
0 -10 ISOLATION (dB) -20 -30 -40 -50 INPUT RL (dB) 4 7 10 13 16 19 22
0
20
-10
GAIN (dB)
15
-20
10
5
-30
-60 4 7 10 13 16 19 22 -70 -40 4 7 10 13 16 19 22
0
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 1. Gain
Figure 2. Isolation
Figure 3. Input Return Loss
0
10
18 15 12 9 6
-10 OUTPUT RL (dB) NF (dB)
8 P1dB (dBm) 4 7 10 13 16 19 22
6
-20
4 -30
2
3 0
-40
4
7
10
13
16
19
22
0
4
7
10
13
16
19
22
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4.Output Return Loss
Figure 5. Noise Figure
Figure 6. Output Power at 1dB Gain Compression
AMMC-5620 Typical Performances vs. Supply Voltage (Tb = 25C, Zo=50)
25 0
Vdd=4V Vdd=5V Vdd=6V
0
20 ISOLATION (dB)
-20
-10 INPUT RL (dB)
GAIN (dB)
15
-20
-40
10
Vdd=4V Vdd=5V Vdd=6V
-30
5
-60
Vdd=4V Vdd=5V Vdd=6V
-40
0
4
7
10
13
16
19
22
-80
4
7
10
13
16
19
22
-50
4
7
10
13
16
19
22
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 7. Gain and Voltage
Figure 8. Isolation and Voltage
Figure 9. Input Return Loss and Voltage
3
AMMC-5620 Typical Performances vs. Supply Voltage (cont.) (Tb = 25C, Zo=50)
0 20
-10 OUTPUT RL (dB) P1dB (dBm)
16
12
-20
Vdd=4V Vdd=5V Vdd=6V
8
-30
Vdd=4V Vdd=5V Vdd=6V
4
-40
4
7
10
13
16
19
22
0
4
7
10
13
16
19
22
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 10. Output Return Loss and Voltage
Figure 11. Output Power and Voltage
AMMC-5620 Typical Performance vs. Temperature (VDD = 5V, Zo=50)
24 20 ISOLATION (dB) 16 GAIN (dB) 12 8 4 0
-40 C 25 C 85 C
0 -10 -20 -30 -40 -50 -60 4 7 10 13 16 19 22 -70 4 7 10 13 16 19 22
-40 C 25 C 85 C
0
-10 INPUT RL (dB)
-20
-30
-40 C 25 C 85 C
-40
4
7
10
13
16
19
22
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 12. Gain and Temperature
Figure 13. Isolation and Temperature
Figure 14. Input Return Loss and Temperature
0 -5 OUTPUT RL (dB) -10 NF (dB) -15 -20 -25 -30 -35 4 7 10 13 16
-40 C 25 C 85 C
7 6 5 4 3 2 1 22 0 4 7 10 13 16
-40 C 25 C 85 C
18 15 12 P1dB (dB) 9 6 3 0
-40 C 25 C 85 C
19
19
22
4
7
10
13
16
19
22
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 15. Output Return Loss and Temperature
Figure 16. Noise Figure and Temperature
Figure 17. Output Power and Temperature
4
AMMC-5620 Typical Scattering Parameters [1] (Tb = 25C, VDD =5 V, IDD = 107 mA)
S11 Freq GHz 2.00 2.50 3.00 3.50 4.00 4.50 5.00 5.50 6.00 6.50 7.00 7.50 8.00 8.50 9.00 9.50 10.00 10.50 11.00 11.50 12.00 12.50 13.00 13.50 14.00 14.50 15.00 15.50 16.00 16.50 17.00 17.50 18.00 18.50 19.00 19.50 20.00 20.50 21.00 21.50 22.00 dB -2.9 -3.3 -3.5 -3.7 -3.8 -4.0 -5.0 -7.7 -12.0 -16.9 -21.9 -27.2 -32.8 -33.4 -30.9 -27.7 -24.9 -22.6 -20.7 -19.3 -18.2 -17.3 -16.6 -16.0 -15.6 -15.3 -15.1 -15.0 -14.9 -14.9 -15.0 -15.0 -14.9 -14.7 -14.3 -13.8 -13.1 -11.9 -10.5 -9.0 -7.5 Mag 0.72 0.69 0.67 0.65 0.64 0.63 0.56 0.41 0.25 0.14 0.08 0.04 0.02 0.02 0.03 0.04 0.06 0.07 0.09 0.11 0.12 0.14 0.15 0.16 0.17 0.17 0.18 0.18 0.18 0.18 0.18 0.18 0.18 0.18 0.19 0.2 0.22 0.25 0.3 0.35 0.42 Phase -147 -168 173 154 134 111 81 49 23 5 -8 -18 -17 -5 -15 -32 -50 -66 -80 -92 -103 -113 -123 -131 -140 -148 -156 -164 -172 179 170 160 149 137 122 106 89 72 53 36 19 S21 dB -23.3 -16.1 -10.0 -4.6 0.8 6.6 12.0 15.2 16.7 17.0 17.2 17.4 17.9 18.2 18.4 18.4 18.4 18.5 18.5 18.5 18.5 18.5 18.5 18.6 18.6 18.7 18.8 18.9 19.1 19.2 19.3 19.5 19.7 19.9 20.0 20.1 20.2 20.3 20.3 20.2 19.9 Mag 0.07 0.16 0.31 0.59 1.1 2.15 3.96 5.73 6.84 7.06 7.28 7.41 7.81 8.12 8.29 8.34 8.35 8.37 8.36 8.37 8.38 8.4 8.43 8.48 8.53 8.6 8.71 8.81 8.97 9.11 9.25 9.43 9.62 9.84 10 10.2 10.3 10.4 10.3 10.2 9.88 Phase -176 146 114 87 62 34 -5 -50 -91 -123 -150 -173 164 142 121 101 83 65 48 32 16 1 -14 -29 -44 -58 -73 -87 -101 -116 -131 -145 -161 -176 168 151 134 117 99 80 60 S12 dB -50.0 -46.1 -44.0 -42.9 -42.1 -41.5 -42.1 -44.7 -49.0 -53.7 -58.0 -60.6 -61.9 -64.4 -64.4 -63.1 -63.5 -64.4 -64.4 -64.2 -62.1 -63.3 -64.4 -62.1 -61.9 -62.1 -62.9 -64.1 -61.2 -60.0 -61.8 -62.1 -61.9 -62.7 -61.9 -61.9 -60.0 -60.9 -64.1 -67.5 -67.5 Mag 0 0 0.01 0.01 0.01 0.01 0.01 0.01 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 Phase 46 -1 -46 -89 -132 -179 128 72 19 -30 -78 -123 -160 -178 -179 -169 157 144 145 130 127 126 125 118 107 107 98 82 94 95 60 80 70 67 70 61 45 41 38 13 5 S22 dB -1.5 -2.5 -3.6 -4.5 -5.3 -6.7 -9.6 -15.2 -21.8 -24.8 -26.4 -30.0 -34.5 -28.3 -23.8 -21.2 -19.3 -18.1 -17.1 -16.3 -15.7 -15.1 -14.7 -14.4 -14.2 -14.0 -13.7 -13.6 -13.4 -13.3 -13.3 -13.2 -13.2 -13.3 -13.4 -13.6 -14.0 -14.1 -14.6 -15.1 -15.5 Mag 0.85 0.75 0.66 0.6 0.54 0.46 0.33 0.17 0.08 0.06 0.05 0.03 0.02 0.04 0.06 0.09 0.11 0.12 0.14 0.15 0.16 0.18 0.18 0.19 0.2 0.2 0.21 0.21 0.21 0.22 0.22 0.22 0.22 0.22 0.21 0.21 0.2 0.2 0.19 0.18 0.17 Phase -72 -89 -104 -118 -136 -158 175 157 165 -173 -164 -155 -102 -61 -60 -65 -72 -78 -84 -90 -95 -101 -105 -110 -115 -120 -126 -131 -136 -140 -145 -150 -154 -159 -166 -171 -177 179 173 168 162
Note: Data obtained from on-wafer measurements.
5
Biasing and Operation The AMMC-5620 is normally biased with a single positive drain supply connected to the VDD bond pads shown in Figure 19. The recommended supply voltage is 5 V, which results in IDD = 95 mA (typical). No ground wires are required because all ground connections are made with plated through-holes to the backside of the device. Refer the Absolute Maximum Ratings table for allowed DC and thermal conditions.
Assembly Techniques The backside of the AMMC-5620 chip is RF ground. For microstripline applications, the chip should be attached directly to the ground plane (e.g., circuit carrier or heatsink) using electrically conductive epoxy[1]. For best performance, the topside of the MMIC should be brought up to the same height as the circuit surrounding it. This can be accomplished by mounting a gold plated metal shim (same length and width as the MMIC) under the chip, which is of the correct thickness to make the chip and adjacent circuit coplanar. The amount of epoxy used for chip and or shim attachment should be just enough to provide a thin fillet around the bottom perimeter of the chip or shim. The ground plane should be free of any residue that may jeopardize electrical or mechanical attachment. The location of the RF bond pads is shown in Figure 20. Note that all the RF input and output ports are in a Ground-Signal-Ground configuration. RF connections should be kept as short as reasonable to minimize performance degradation due to undesirable series inductance. A single bond wire is sufficient for signal connections, however double-bonding with 0.7 mil gold wire or the use of gold mesh[2] is recommended for best performance, especially near the high end of the frequency range. Thermosonic wedge bonding is the preferred method for wire attachment to the bond pads. Gold mesh can be attached using a 2 mil round tracking tool and a tool force of approximately 22 grams with an ultrasonic power of roughly 55 dB for a duration of 76 8 mS. A guided wedge at an ultrasonic power level of 64 dB can be used for the 0.7 mil wire. The recommended wire bond stage temperature is 150 2 C. Caution should be taken to not exceed the Absolute Maximum Rating for assembly temperature and time. The chip is 100 m thick and should be handled with care. This MMIC has exposed air bridges on the top surface and should be handled by the edges or with a custom collet (do not pick up die with vacuum on die center.) This MMIC is also static sensitive and ESD handling precautions should be taken.
Notes: 1. Ablebond 84-1 LM1 silver epoxy is recommended. 2. Buckbee-Mears Corporation, St. Paul, MN, 800-262-3824
6
VD1
Feedback network
Feedback network
Feedback network
RF Output
Matching Matching
RF Input
Matching
Matching
Figure 18. AMMC-5620 Schematic
To power supply 100 pF chip capacitor
Gold plated shim
RF Input
AMMC-5620
RF Output
Figure 19. AMMC-5620 Assembly Diagram
7
875 (VDD)
1010 910
350 (RFIn)
350 (RFOut)
0
0
90
1315
1410
Figure 20. AMMC-5620 Bond Pad Locations. (dimensions in microns)
Ordering Information: AMMC-5620-W10 = 10 devices per tray AMMC-5620-W50 = 50 devices per tray
For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, AV02-0528EN in the United States and other countries. Data subject to change. Copyright (c) 2007 Avago Technologies Limited. All rights reserved. Obsoletes AV01-0222EN AV02-0528EN - June 19, 2007

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